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Pulsed laser deposition of barium metaplumbate thin films for ferroelectric capacitors

Published online by Cambridge University Press:  12 June 2003

A. I. Mardare*
Affiliation:
INESC-Porto, Unidade de Optoelectrónica e Sistemas Electrónicos, 4169-007 Porto, Portugal
C. C. Mardare
Affiliation:
INESC-Porto, Unidade de Optoelectrónica e Sistemas Electrónicos, 4169-007 Porto, Portugal
J. R. A. Fernandes
Affiliation:
INESC-Porto, Unidade de Optoelectrónica e Sistemas Electrónicos, 4169-007 Porto, Portugal Universidade de Trás-os-Montes e Alto Douro, Departamento de Física, 5001-911 Vila Real, Portugal
P. M. Vilarinho
Affiliation:
Universidade de Aveiro, Departamento de Engenharia Cerâmica e do Vidro, 3810-193, Aveiro, Portugal
E. Joanni
Affiliation:
INESC-Porto, Unidade de Optoelectrónica e Sistemas Electrónicos, 4169-007 Porto, Portugal Universidade de Trás-os-Montes e Alto Douro, Departamento de Física, 5001-911 Vila Real, Portugal
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Abstract

Barium metaplumbate thin films were deposited in situ by pulsed laser deposition on Si/SiO2/Ti/Pt substrates with a high deposition rate. The temperatures used ranged between 400 °C and 700 °C. As the deposition temperature was increased, the films assumed a strong (222) preferential orientation. This orientation of the electrodes was reflected on the PZT films, having a very big influence on their ferroelectric behavior. The PZT films made over BPO deposited at high temperature presented high values of remanent polarization (43 μC/cm2) but indications of high leakage currents could be observed in the hysteresis loops. By using BPO bottom electrodes, a 30% improvement in the fatigue behavior of PZT capacitors when compared with the normal platinum electrodes was observed.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2003

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A.I. Mardare, C.C. Mardare, E. Joanni, J.R.A. Fernandes, P.M. Vilarinho, A.L. Kholkin, Ferroelectrics (to be published)