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Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

Published online by Cambridge University Press:  15 February 2011

U. Birkle ,
M. Fehrer ,
V. Kirchner ,
S. Einfeldt ,
D. Hommel ,
S. Strauf ,
P. Michler  and
J. Gutowski
U. Birkle
Affiliation:
University of Bremen, Inst. of Solid State Physics, Kufsteiner Str., 28359 Bremen, Germany
M. Fehrer
Affiliation:
University of Bremen, Inst. of Solid State Physics, Kufsteiner Str., 28359 Bremen, Germany
V. Kirchner
Affiliation:
University of Bremen, Inst. of Solid State Physics, Kufsteiner Str., 28359 Bremen, Germany
S. Einfeldt
Affiliation:
University of Bremen, Inst. of Solid State Physics, Kufsteiner Str., 28359 Bremen, Germany
D. Hommel
Affiliation:
University of Bremen, Inst. of Solid State Physics, Kufsteiner Str., 28359 Bremen, Germany
S. Strauf
Affiliation:
University of Bremen, Inst. of Solid State Physics, Kufsteiner Str., 28359 Bremen, Germany
P. Michler
Affiliation:
University of Bremen, Inst. of Solid State Physics, Kufsteiner Str., 28359 Bremen, Germany
J. Gutowski
Affiliation:
University of Bremen, Inst. of Solid State Physics, Kufsteiner Str., 28359 Bremen, Germany
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Abstract

GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm-1 to 10 20 cm-1. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G5.6
Copyright
Copyright © Materials Research Society 1999

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