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Ballistic-Electron-Emission Microscopy (BEEM) Studies of Gainp/GaAs Heterostructures

Published online by Cambridge University Press:  10 February 2011

J. J. O'Shea ,
C. M. Reaves ,
M. A. Chin ,
S. P. Denbaars ,
A. C. Gossard ,
V. Narayanamurti  and
E. D. Jones
J. J. O'Shea
Affiliation:
Materials Department
C. M. Reaves
Affiliation:
Materials Department
M. A. Chin
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
S. P. Denbaars
Affiliation:
Materials Department Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
A. C. Gossard
Affiliation:
Materials Department Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
V. Narayanamurti
Affiliation:
Materials Department
E. D. Jones
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

Ballistic-electron-emission microscopy (BEEM) has been used to study band-offsets in n-and p-type GaInP/GaAs heterostructures. We determine room temperature offsets of 30 meV and 350 meV in the conduction and valence bands, respectively, for thin GaInP layers grown by metal-organic chemical vapor deposition (MOCVD) at 610°C. Low temperature (77 K) measurements also indicate at least 90% of the band discontinuity lies in the valence band for these ordered GaInP samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 79
Copyright
Copyright © Materials Research Society 1996

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