Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-18T23:49:07.168Z Has data issue: false hasContentIssue false
  • English
  • Français

Czochralski Growth of Indium Iodide and other Wide Bandgap Semiconductor Compounds

Published online by Cambridge University Press:  12 July 2011

I. Nicoara ,
D. Nicoara ,
C. Bertorello ,
G.A. Slack ,
A. G. Ostrogorsky ,
M. Groza  and
A. Burger
I. Nicoara
Affiliation:
Illinois Institute of Technology (IIT), Chicago, IL 60616
D. Nicoara
Affiliation:
Illinois Institute of Technology (IIT), Chicago, IL 60616
C. Bertorello
Affiliation:
Illinois Institute of Technology (IIT), Chicago, IL 60616
G.A. Slack
Affiliation:
Illinois Institute of Technology (IIT), Chicago, IL 60616
A. G. Ostrogorsky
Affiliation:
Illinois Institute of Technology (IIT), Chicago, IL 60616
M. Groza
Affiliation:
Fisk University, Physics Department, Nashville, TN 37208
A. Burger
Affiliation:
Fisk University, Physics Department, Nashville, TN 37208
Get access

Abstract

The Czochralski pulling process is the most valuable and cost efficient method for producing large oriented single crystals of the group IV and III-V semiconductors. However, there have been only a small number of reported attempts to use the Czochralski process for growing the wide bandgap compound semiconductors, needed for the room temperature operated gamma-ray detectors. The main difficulty is in the low chemical stability and high vapor pressure of the group II, V and VI elements, leading to off-stoichiometric composition, and various related defects. Among the heavy metal halides, indium iodide and indium bromide present an interesting exception. InI has a high molecular disassociation energy and a low vapor pressure, allowing for Czochralski pulling. We will describe the procedures used and the results obtained by Czochralski growth and characterization of indium iodide and the related ternary compounds that appear to be quite encouraging.

Keywords

crystal growthsemiconductingIn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1341: Symposium U – Nuclear Radiation Detection Materials , 2011 , mrss11-1341-u09-01
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hobgooda, H.M., Swansona, B.W. and Thomas, R.N., “Czochralski growth of CdTe and CdMnTe from liquid encapsulated melts”, J. Crystal Growth 85, (1987) 510–520 Google Scholar
2. Blackmore, G.W., Courtney, S.J., Royle, A., Shaw, N., Vere, A.W.,“Boron-segregation in Czochralski-grown CdTe” J. Crystal Growth 85 (1987) 335–340 Google Scholar
3. Barin, I., “Thermophisical Data of Pure Substances”, 2nd Edition, VCH Verlagsgesellschaft, Weinheim, Germany, 1993.Google Scholar
4. Wyckoff, R.W.G., “Crystal Structures” 2nd Edition, Volume 1, Interscience, New York, 1963.Google Scholar
5. Squillante, M.R., Zhou, C., Zhang, J., Moy, L.P. and Shah, K.S., InI Nuclear Radiation Detectors IEEE Trans. on Nucl. Sci. 40/ 4 (1993) 364–366.Google Scholar
6. Bhattacharya, P., Groza, M., Cui, Y., Caudel, D., Wrenn, T., Nwankwo, A., Burger, A., Slack, G., Ostrogorsky, A.G., Growth of InI single crystals for nuclear detection applications’, J. Crystal Growth 312 (2010) 1228–1232.Google Scholar
7. Shah, K.S., Bennett, P., Moy, L. P., Misra, M.M., Moses, W.W., Nucl. Intruments and Methods in Pyisics Research A 380 (1996) 215–219.Google Scholar
8. Croll, A., University of Freiburg, Germany, personal communication 2010.Google Scholar
9. Peretti, E.A., J. Am. Chem. Soc. 78, 5745–6(1956).Google Scholar