Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-24T23:33:03.451Z Has data issue: false hasContentIssue false
  • English
  • Français

PL due to Discrete Gap Levels in Some Chalcogenide Glasses- A Configurational Coordinate Diagram Illustration

Published online by Cambridge University Press:  21 March 2011

N. Asha Bhat ,
K.S. Sangunni  and
K.S.R.K. Rao
N. Asha Bhat
Affiliation:
Department of Physics, Indian Institute of Science Bangalore –560 012, INDIA
K.S. Sangunni
Affiliation:
Department of Physics, Indian Institute of Science Bangalore –560 012, INDIA
K.S.R.K. Rao
Affiliation:
Department of Physics, Indian Institute of Science Bangalore –560 012, INDIA
Get access

Abstract

Photoluminescence (PL) studies were carried out on a-Se and a few Ge20Se80−xBix and Ge20Se70−xBixTe10 bulk glassy semiconductors at 4.2 K with Ar+ laser as excitation source. While a-Se and samples with lesser at% of Bi show fine structured PL with a large Stokes shift, samples with higher at% of Bi did not show any detectable PL. The investigations show at least three radiative recombination transitions. Features extracted by deconvoluting the experimental spectra show that the discrete gap levels associated with the inherent coordination defects are involved in the PL transitions. Absence of PL in samples with higher Bi at% are explained on the basis of nonradiative transition mechanisms. Overall PL mechanism involving gap levels in chalcogenide glasses is illustrated with the help of a configurational coordinate diagram.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G3.4
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rowlands, J. and Kasap, S., Physics today 50 24 (1997).Google Scholar
2. Ramachandran, S. and Bishop, S.G., Appl. Phys. Lett. 73 3196 (1998).Google Scholar
3. Tohge, N., Minami, T., Yamamoto, Y. and Tanaka, M., J. Appl. Phys. 51 1048 (1980).Google Scholar
4. Tohge, N., Matsuo, H. and Minami, T., J. Non-Cryst. Solids 95 & 96 809 (1987).Google Scholar
5. Phillips, J.C., Phys. Rev. B36 4265 (1987).Google Scholar
6. Elliot, S.R. and Steel, A.T., J. Phys. CL Solid State Phys. 20 4335 (1987).Google Scholar
7. Bhat, N. Asha and Sangunni, K.S., Solid State Commun. 116 (2000) 297.Google Scholar
8. Stret, R.A., Adv. Phys., 25 395 (1976) and references therein.Google Scholar
9. Street, R. A. and Mott, N.F., Phys.Rev. Lett. 35 1293 (1975).Google Scholar
10. Kastner, M., Adler, D. and Fritzche, H., Phys. Rev. Lett. 37 1504 (1976).Google Scholar
11. Blasse, G. and Grabmaier, B.C., Luminescent Materials, (Springer Verlag, 1994).Google Scholar
12. Davis, E.A., Topics in applied Phys: Amorphous Semiconductors, (Springer Verlag, Berlin, 1979) p 41.Google Scholar
13. Bhat, N. Asha, Sangunni, K.S. and Rao, K.S.R.K., to be published.Google Scholar