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TEM Study and Hall Measurement of nc-Si Prepared by Controlled Deposition

Published online by Cambridge University Press:  28 February 2011

Masami Nakata  and
Isamu Shimizu
Masami Nakata
Affiliation:
oPrinceton University, Department of Electrical Engineering, Princeton, NJ 08544–5263
Isamu Shimizu
Affiliation:
Tokyoy Institute of Technology, Department of Electronic Chemistry, Yokohama 227, Japan
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Abstract

We report the results of a study in which we combined growth experiments with measurements of the nc-structure and of electrical transport Samples were prepared by plasma enhanced-CVD using SiF4 and H2 gases. We also added PH3 and H2 as control parameters for structural change. The microscopic structure was directly observed by TEM. Electron transport in nc-Si was investigated by Hall effect measurements performed at temperatures from 100K to 400K. We produced samples in which the Hall mobility was applied from general transport mechanism of poly crystalline silicon. However, from TEM observation, we conclude that dominant factor on electrical transport strongly depends on the sample structure, and nanocrystalline-silicon structure is so varied as to make it difficult to determine the transport mechanism without the observation of the microscopic structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 591
Copyright
Copyright © Materials Research Society 1993

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References

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