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Capacitance Studies of Ion-Implanted N-Type Hydrogenatfd Amdrphous Silicon

Published online by Cambridge University Press:  26 February 2011

C. E. Michelson ,
J. D. Cohen  and
J. P. Harbison
C. E. Michelson
Affiliation:
University, of Oregon, Eugene, OR 97403
J. D. Cohen
Affiliation:
University, of Oregon, Eugene, OR 97403
J. P. Harbison
Affiliation:
Bell Communications Research, Inc., Murray Hill, NJ 07974
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Abstract

The effect of the implantation of oxygen ions on the density of states in the mobility gap of n type hydrogenated amorphous silicon (a-Si:H) is studied using drive-level capacitance profiling, deep-level transient spectroscopy( DLTS), and transient voltage-pulse photocapacitance. After implantation, we observe a broadening of both the conduction and valence band tails and an increase in the dangling bond density near midgap, as well as a shift of the Fermi level toward midgap by approximately 100 meV in two out of the throe films studied. We also observed the addition of a distinct defect band at approximately 0.7 eV below the conduction nd mobility edge in films implanted with oxygen doses greater than 1012 cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 71
Copyright
Copyright © Materials Research Society 1987

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References

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