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Properties of Doped a-Si:H Films Deposited by Ecr Plasma CVD

Published online by Cambridge University Press:  25 February 2011

H. Murai ,
M. Hayama ,
K. Kobayashi  and
T. Yamazaki
H. Murai
Affiliation:
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
M. Hayama
Affiliation:
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
K. Kobayashi
Affiliation:
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
T. Yamazaki
Affiliation:
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661, Japan
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Abstract

Phosphorous doped hydrogenated amorphous silicon films were deposited by microwave electron cyclotron resonance (ECR) plasma CVD at a substrate temperature of 100°C. Electrical, optical and hydrogen-incorporation properties of the films have been investigated. By optimizing the deposition condition, the dark conductivity of 3×10−4S/cm is realized without subsequent annealing. Relations between the film properties and ECR plasma properties have been studied by means of optical emission spectroscopy (OES) and quadrupole mass spectroscopy (QMS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 283
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Carlson, D. E. and Wronski, C. R., Appl. Phys. Lett. 28, 671 (1976)Google Scholar
2. Hayama, M., Kobayashi, K., Miki, H. and Onishi, Y., Mater. Res. Soc. Symp. Proc. 70, 698 (1986)Google Scholar
3. Sakamoto, H., Hayama, M., Takasago, h., Sugiura, T., Yamane, K., Arai, H., Tokutoml, Y., Ando, T., watanabe, K., Miki, H. and Onishl, Y., Proc. SID 28/2, 145 (1987)Google Scholar
4. Matsuda, A., Kaga, T., Tanaka, T., Malhotra, I. and Tanaka, K., Jpn. J. Appl. Phys. 22, L115 (1983)Google Scholar
5. Matsuo, S. and Kiuchi, M., Jpn. J. Appl. Phys. 22, L210 (1983)Google Scholar
6. Hayama, M., Kobayashi, K., Kawamoto, S., Miki, H. and Onishi, Y., J. Non-Cryst. Solids 97/98, 273 (1987)Google Scholar
7. Kobayashi, K., Hayama, M., Kawamoto, S. and Miki, H., Jpn. J. Appl. Phys. 26, 202 (1987)Google Scholar
8. Hayama, M., Mural, H. and Kobayashi, K., J. Appl. Phys. 67(3), 1356 (1990)Google Scholar
9. Kitagawa, M., Setsune, K., Manabe, Y. and Hlirao, T., J. Appl. Phys. 61 (5), 2084 (1987)Google Scholar
10. Shanks, H., Fang, C.J., Ley, L., Cardona, M., Demond, F. J. and Kalbitzer, S., Phys. Stat. Sol. (b) 100, 43 (1980)Google Scholar
11. Matsuda, A., Matsumura, M., Nakagawa, K., Yamasaki, S. and Tanaka, K., Proc. 9th Int. Conf. on Amorphous and Liquid Semiconductors, Grenoble, 1981, in J. Phys. (Paris), Colloq. C4, 42 (1981)Google Scholar
12. Kampas, F. J. and Griffith, R. W., J. Appl. Phys. 52(3), 1285 (1981)Google Scholar
13. Matsuda, A., Kaga, T., Tanaka, H., Malhotra, L. and Tanaka, K., Jpn. J. Appl. Phys. 22, L115 (1983)Google Scholar