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Study of Hall Effect and Magnetoresistance on a Novel Epitaxial FeSi Phase on Si(lll)

Published online by Cambridge University Press:  25 February 2011

N. Onda ,
H. Sirringhaus ,
P. Steiner  and
H. Von
N. Onda
Affiliation:
Laboratorium fur Festkörperphysik, ETH—Zürich, 8093 Zürich, Switzerland
H. Sirringhaus
Affiliation:
Laboratorium fur Festkörperphysik, ETH—Zürich, 8093 Zürich, Switzerland
P. Steiner
Affiliation:
Laboratorium fur Festkörperphysik, ETH—Zürich, 8093 Zürich, Switzerland
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Abstract

The first magneto—transport data taken on thin pseudomorphic FeSi films with the CsCl structure are presented. FeSi appears to be a Kondo system with a Kondo temperature of TK ∼ 15 K. On air-exposed films which have not been protected by a Si-cap an ultrathin magnetic oxide is formed leading to large anomalies in the Hall effect and the magnetoresistance as the film thickness approaches 20 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 497
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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