Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-05-16T14:57:05.719Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence Excitation Spectroscopy of MOCVD-Grown: GaAs:V

Published online by Cambridge University Press:  25 February 2011

Y.J. Kao ,
N.M. Haegel  and
W.S. Hobson
Y.J. Kao
Affiliation:
Dept of Materials Science and Engineering, University of California - Los Angeles, Los Angeles, CA 90024;
N.M. Haegel
Affiliation:
Dept of Materials Science and Engineering, University of California - Los Angeles, Los Angeles, CA 90024;
W.S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
Get access

Abstract

Photoluminescence excitation spectra have been obtained at 4.2 K for the characteristic V3+ intra-center emission (0.65 – 0.75 eV) of MOCVD-grown GaAs:V. Oscillatory structure of the PLE spectrum with above-band-edge excitation has been observed in GaAs:V for the first time. The oscillatory period is found to be 41.3 ± 0.5 meV, corresponding to , and is due to energy relaxation of conduction band electrons through LO phonon emission. Our results suggest capture by a shallow donor as an intermediate step in the luminescence from the V center.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 63
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kaufmann, U., Ennen, H., Schneider, J., and Worner, R., Phys. Rev. B 25, 5598 (1982).Google Scholar
2 Brandt, C. D., Hennel, A. M., Pawlowicz, L. M., Dabkowski, F. P., Lagowski, J., and Gatos, H. C., Appl. Phys. Lett. 42, 607 (1985).Google Scholar
3 Clerjaud, B., Naud, C., Deveaud, B., Lambert, B., Plot, B., Bremond, G., Benjeddou, C., Guillot, G., and Nouailhat, A., J. Appl. Phys. 58, 4207 (1985).Google Scholar
4 Hennel, A. M., Brandt, C. D., Ko, K. Y., Lagowski, J., and Gatos, H. C., J. Appl. Phys. 62, 163 (1988).Google Scholar
5 Hobson, W. S., Pearton, S. J., Swaminathan, V., Jordan, A. S., Kanber, H., Kao, Y. J., and Haegel, N. M., Appl. Phys. Lett. 54, 1772 (1989).Google Scholar
6 Nahory, R. E., Phys. Rev. 178, 1293 (1961).Google Scholar
7 Shaw, R. W., Phys. Rev. B 3, 3283 (1971).Google Scholar
8 Ulrich, R., Phys. Rev. Lett. 27, 1512 (1971).Google Scholar
9 Weisbuch, C., Solid-State Electron. 21, 179 (1978).Google Scholar
10 Shanabrook, B. V., Klein, P. B., Swiggard, E. M., and Bishop, S. G., J. Appl. Phys. 54, 336 (1983).Google Scholar
11 Won Yu, Phil, Phys. Rev. B 29, 2283 (1984).Google Scholar