Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-18T23:29:23.894Z Has data issue: false hasContentIssue false
  • English
  • Français

Fourier Transform Photoluminescence Analysis of Trace Impurities and Defects in Silicon

Published online by Cambridge University Press:  25 February 2011

W. M. Duncan ,
M. L. Eastwood  and
H-L. Tsai
W. M. Duncan
Affiliation:
Texas Instruments Incorporated., Central Research Laboratories, Dallas, TX 75265
M. L. Eastwood
Affiliation:
MIDAC Corporation, Costa Mesa, CA 92627
H-L. Tsai
Affiliation:
Texas Instruments Incorporated., Central Research Laboratories, Dallas, TX 75265
Get access

Abstract

In this paper we describe Fourier transform Photoluminescence (FTPL) spectroscopy and report the first application of this technique to the analysis of semiconductor silicon. Two applications of FTPL spectroscopy to silicon are discussed. The first application is to quantitative trace analysis of the Ill-V impurities B,P, As and Al in silicon. Both high purity and compensated silicon have been studied and PL features correlated to the concentrations of the individual impurity species present. The capability of analysing B, P, As and Al at part per trillion atomic concentrations in silicon is demonstrated. In the second part of this paper, application of FTPL to the analysis of thermally induced microdefects in silicon is discussed. Defect band intensities are shown to be proportional to the concentration of interstitial oxygen precipitated in the case of plate precipitate morphology. In these two applications, FTPL is shown to uniquely provide both residual impurity and microdefect information of as grown and processed silicon.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 225
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Haynes, J.R., Lax, M. and Flood, W.F., Phys. Chem. Solids, 8, 392(1959).Google Scholar
2. Dean, P.J., Haynes, J.R. and Flood, W.F., Phys. Rev., 161, 711(1967).Google Scholar
3. Lyon, S.A., Smith, D.L., and McGill, T.C., Phys. Rev. (B), 17, 2620(1978).Google Scholar
4. Elliott, K.R. and McGill, T.C., Solid State Comm., 28, 491(1978).Google Scholar
5. Tajima, M., Appl. Phys. Lett., 32, 719(1978).Google Scholar
6. Baber, S.C., Thin Solid Films, 72, 201(1980).Google Scholar
7. Katsura, J., Nakayama, H., Nishina, T. and Hamakawa, Y., Jpn. J. Appl. Phys., 21, 712(1982).Google Scholar
8. Tajima, M. and Matsushita, Y., Jpn. J. Appl. Phys., 22, L589(1983).CrossRefGoogle Scholar
9. Nakayama, H., Nishino, T. and Hamakawa, Y., Jpn. J. Appl. Phys., 19, 501(1980).Google Scholar
10. Moroi, D.S., Ohmer, M.C., Szmulowicz, F. and Brown, D.H., J. Appl. Phys., 59, 1309(1986).Google Scholar
11. Drozdov, N.A., Patrin, A.A., and Tkachev., V.D., phys. stat. sol.(b), 83, K 137(1977).Google Scholar
12. Suezawa, M., Sasaki, Y., Nishina, Y. and Sumino, K., Jpn. J. Appl. Phys., 20, L537(1981).Google Scholar
13. Bourret, A., in “The Proceedings of the Thirteenth International Conference on Defects in Semiconductors,” Coronado, CA, Aug. 1984, Kimerling, L.C. and Parsey, J.M., editors, p. 129.Google Scholar
14. Kanamori, A. and Kanamori, M., J. Appl. Phys., 50, 8095(1979).CrossRefGoogle Scholar
15. Gaworzewski, P., Hild, E. and Schmalz, K., phys. stat. sol.(a), 90, K151(1985).Google Scholar