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Silicon Surface Morphology and the Reaction of Silicon with Oxygen

Published online by Cambridge University Press:  25 February 2011

Frances M. Ross  and
J. Murray Gibson
Frances M. Ross
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Murray Gibson
Affiliation:
University of Illinois Materials Research Laboratory, 104 S. Goodwin Ave., Urbana, IL 61801
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Abstract

We discuss the measurement of the morphology of exposed surfaces and buried interfaces using plan view transmission electron microscopy techniques. We have observed the evolution of the silicon/oxide interface during both oxidation and oxygen etching of the Si (111) surface. We describe the interface morphology, the mechanisms of these oxidation reactions and the implications of these results for the processing of silicon surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 87
Copyright
Copyright © Materials Research Society 1992

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References

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