We have studied the interface and the lattice strain of superlattices by ion channeling technique. The objective in this work is to verify the existence of alternating tensile and compressive strain in the superlattice and to develop a method for measuring the lattice strain directly. Alternating layers of GaSb/Al Sb were grown epitaxially by MBE with 10 periods. The thickness of each individual layer is 30 nm. Channeling measurements and analysis were made using a 1.76 MeV 4He ion beam. The measurements reveal higher dechanneling along the [110] axis than along the [100] axis. This is consistent with the dechanneling results published earlier. The high dechanneling along the [110] axis has been considered due to the lattice strain that occurs in the layers caused by the slight mismatch between the lattice constants of the two materials. The strain effect make [110] axis slightly bent from layer to layer (“zigzag”), but it does not occur in [100] axis. The axial angular scan analyses were made around the [110] direction at the different depths using a movable energy window setting. We have found that the angular position of the best alignment shifts from layer to layer. The oscillation of those angular positions with depth is of a direct evidence of the existence of alternating tension and compression strain layers in the superlattice. The “kink” angle at the interface is given by the difference of the angular position between the first and second layer. This is found to be 0.17° ± 0.03 %. This is in a good agreement with the result calculated from elasticity. Preliminary result of this experiment is recently published.3

We are also investigating the interface and lattice strain by planar angular scan across the (110) plane at a position three degrees from [110] axis.

The similar oscillatory results have been found for {110} planar channeling and the “kink” angle measurement is in a good agreement with the results from axial angular scan.

We believe that the method of ion beam channeling and angular scan is very effective in strain measurements in multi-layered heteroexpitaxy system.

3. W. K. Chu, C. K. Pan and C.-A. Chang, Phys. Rev. Rapid Communication B28, 4033 (1983).