Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-19T22:21:51.580Z Has data issue: false hasContentIssue false
  • English
  • Français

Bonding in Thin Epitaxial CoSi2 Films on Si(100)

Published online by Cambridge University Press:  21 February 2011

David D. Chambliss ,
T. N. Rhodin ,
J. E. Rowe  and
S. M. Yalisove
David D. Chambliss
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY 14853
T. N. Rhodin
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY 14853
J. E. Rowe
Affiliation:
AT&T Bell Laboratories, Murray Hill NJ 07974
S. M. Yalisove
Affiliation:
AT&T Bell Laboratories, Murray Hill NJ 07974
Get access

Abstract

Epitaxy of CoSi2 layers on Si crystal surfaces can be strongly influenced by growing appropriate template layers. The electronic structure of thin (∼7Å) epitaxial CoSi2 films on Si(100) has been studied with angle-resolved photoemission to investigate atomic bonding in the layers and at their boundaries. Most Co atoms in the layers are in a CoSi2-like environment, including those Co atoms near the free surface. Cobalt atoms at the Si-CoSi 2 interface seem to have fewer Si neighbors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 143: Symposium V – Synchrotron Radiation in Materials Research , 1988 , 67
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mattheiss, L. F. and Hamann, D. R., Phys. Rev. B 37, 10623 (1988).CrossRefGoogle Scholar
2. Bulle-Lieuwma, C. W. T., van Ommen, A. H. and Hornstra, J., Proc. Mat. Res. Soc. Symp. 102, 377 (1988).Google Scholar
3. Yalisove, S. M., Tung, R. T. and Batstone, J. L., Proc. Mat. Res. Soc. Symp. 160.Google Scholar
4. Gewinner, G., Pirri, C., Peruchetti, J. C., Bolmont, D., Derrien, J. and Thiry, P., Phys. Rev. B 38:1879(1988).CrossRefGoogle Scholar
5. Chambliss, D. D., Rhodin, T. N., Rowe, J. E. and Shigekawa, H., J. Vac. Sci. Technol. A 7:xxx (1989).Google Scholar
6. Yeh, J. J. and Lindau, I., At. Data and Nucl. Data Tables 32:1(1985).Google Scholar
7. Hellman, F. and Tung, R. T., Phys. Rev. B 37, 10786 (1988).CrossRefGoogle Scholar
8. van den Hoek, P. J., Ravenek, W. and Baerends, E. J., Phys. Rev. Lett. 60:1743 (1988); Surf. Sci. 205:549 (1988).Google Scholar
9. Loretto, D. and Batstone, J., private communication, 1988.Google Scholar
10. Cherns, D., Anstis, G. R., Hutchison, J. L. and Spence, J. C. H., Phil. Mag. A46, 849 (1982).CrossRefGoogle Scholar