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Bottom Electrodes for High Dielectric Oxide Compounds: Effects on Crystallization of Lead Containing Ferroelectrics

Published online by Cambridge University Press:  21 February 2011

A. Grill ,
D. Beach ,
C. Smart  and
W. Kane
A. Grill
Affiliation:
IBM-Research Division, T.J.Watson Research Center, Yorktown Heights, N.Y. 10598
D. Beach
Affiliation:
IBM-Research Division, T.J.Watson Research Center, Yorktown Heights, N.Y. 10598
C. Smart
Affiliation:
IBM-Research Division, T.J.Watson Research Center, Yorktown Heights, N.Y. 10598
W. Kane
Affiliation:
IBM-Research Division, T.J.Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

Several conductive structures, which appeared to be usable as base electrodes for integrated devices based on high dielectric materials, have been annealed for 30 minutes in oxygen at 650 °C. Similar structures coated with lead-based ferroelectrics deposited by the sol-gel method have been annealed for 1 min in oxygen at higher temperatures. The materials have been characterized by Rutherford backscattering (RBS) and scanning electron microscopy (SEM) and the crystallographic structure of the ferroelectrics films has been determined by X-ray diffractometry (XRD).

Only RuO2/Ru has been found to be suitable as an electrode, at temperatures not exceeding 650 °C. It has also been found that the electrode materials can strongly affect the crystallization behavior of the sol-gel ferroelectric films and the formation of single-phase perovskite layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 189
Copyright
Copyright © Materials Research Society 1993

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