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Annealing Study of Ion Implanted MOCVD and MBE Grown GaN

Published online by Cambridge University Press:  21 February 2011

E. Silkowski ,
Y. K. Yeo ,
R. L. Hengehold ,
M. A. Khan ,
T. Lei ,
K. Evans  and
C. Cerny
E. Silkowski
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH 45433
Y. K. Yeo
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH 45433
R. L. Hengehold
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH 45433
M. A. Khan
Affiliation:
APA Optics, Blaine, MN 55449
T. Lei
Affiliation:
Wright Laboratory, Wright-Patterson AFB, OH 45433
K. Evans
Affiliation:
Wright Laboratory, Wright-Patterson AFB, OH 45433
C. Cerny
Affiliation:
Wright Laboratory, Wright-Patterson AFB, OH 45433
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Abstract

MOCVD and MBE grown GaN were implanted with Ar, Mg, Si, Be, C, and O, and annealed in a conventional oven under flowing NH3 or N2 gas. Absorption measurements confirmed that implantation damage was annealed out after 90 minutes at a temperature of 1000 °C. Surface damage caused by NH3 annealing was evident in absorption and photoluminescence measurements for annealing temperatures of over 1000 °C. Although most of the implants showed no unique luminescence peaks, systematic changes in the relative intensities of the exciton, donor-acceptor pair, and yellow peaks were noted. The Mg implanted samples showed evidence of the acceptor bound exciton line at 3.44 eV, and a unique peak at 3.3 eV possibly due to a Mg free-to-bound transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 813
Copyright
Copyright © Materials Research Society 1996

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References

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