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Microhardness Study Of Cathode-Mounted Amorphous Hydrogenated Boron Carbide

Published online by Cambridge University Press:  15 February 2011

Shu-Han Lin
Affiliation:
Department of Physics and Center for Molecular Electronics, University of Missouri, St. Louis, MO 63121
Dong Li
Affiliation:
Department of Materials Science and Engineering and Center for Engineering Tribology, Northwestern University, Evanston, IL 60208
Bernard J. Feldman
Affiliation:
Department of Physics and Center for Molecular Electronics, University of Missouri, St. Louis, MO 63121
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Abstract

We have grown cathode-mounted amorphous hydrogenated boron carbide thin films by rf plasma decomposition of diborane and methane. The chemical composition, infrared absorption, optical absorption, microhardness and adhesion of these thin films were measured. As a function of increasing diborane concentration in the feedstock, we observe increasing boron and decreasing hydrogen concentrations, increasing infrared absorption at 1300 cm-1 due to boron icosahedra, increasing optical band gaps, dramatically increased microhardness, and increased adhesion to the underlying substrates of these thin films. These results provide evidence that the presence of boron icosahedra increases microhardness, adhesion, and optical band gaps.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Jones, D. I. and Stewart, A. D., Phil. Mag. 46, 423 (1982).Google Scholar
2. Meyerson, B. and Smith, F. W., Solid State Commun. 41, 23 (1982).Google Scholar
3. Lee, S., Mazurowski, J., Ramsmeyer, G. and Dowben, P. A., J. Appl. Phys. 72, 4925 (1992).Google Scholar
4. Way, B. M., Dahn, J. R., Tiedje, T., Myrtle, K. and Kasrai, M., Phys. Rev. B 46, 1697 (1992).Google Scholar
5. Veprek, S., Rambert, S., Heintze, M., Mattenberger, F., Jurick-Rajman, M. and Portmann, W., J. Nuclear Materials 162–164, 724 (1989).Google Scholar
6. Onate, J., Garcia, A., Bellido, V. and Viviente, J., Surface and Coating Tech. 49, 548 (1991).Google Scholar
7. Lee, S., Appl. Phys. A A58, 223 (1994).Google Scholar
8. Sylvester, B., Lin, S.-H. and Feldman, B. J., Solid State Commun. 93, 969 (1995).Google Scholar
9. Angus, J. C. and Hayman, C. C., Science 24, 913 (1988).Google Scholar
10. Koidl, P., Wild, Ch., Dischler, B., Wagner, J. and Ramsteiner, M., Mat. Sci. Forum 52 & 53, 41 (1989).Google Scholar
11. Lin, S.-H., Li, D. and Feldman, B. J. in Mechanical Behavior of Diamond and Other Forms of Carbon, edited by Drory, M. D., Bogy, D. B., Donley, M. S., and Field, J. E. (Mater. Res. Soc. Proc. 383, Pittsburgh, PA, 1995) pp. 127132.Google Scholar
12. Doermer, M. F. and Nix, W. D., J. Mater. Res. 1, 70 (1986).Google Scholar
13. Stein, H., Aselage, T. and Emin, D. in Boron-Rich Solids, (Amer. Inst. Phys. Conf. Proc. 231, New York, NY, 1991) pp. 322325.Google Scholar
14. Lin, S.-H., Feldman, B. J., Bodart, J. R., Bork, V. P., Kerman, M. J., Fedders, P. A., and Norberg, R. E. in Novel Forms of Carbon II, edited by Renschler, C. L., Cox, D. M., Pouch, J. J. and Achiba, Y. (Mater. Res. Soc. Proc. 349, Pittsburgh, PA, 1994) pp. 489494.Google Scholar