Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-26T06:39:45.226Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxygen-Induced Inhibition of Noble Metal Silicide Formation: Implications for Electrode/Barrier Structures used with Perovskite Materials

Published online by Cambridge University Press:  10 February 2011

K. L. Saenger ,
A. Grill  and
D. E. Kotecki
K. L. Saenger
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
A. Grill
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
D. E. Kotecki
Affiliation:
IBM Microelectronics Division, Hopewell Junction, NY12533; saenger@watson.ibm.com.
Get access

Abstract

We describe how the inhibitory effect of ambient oxygen on suicide formation may be exploited in designing noble metal electrode structures suitable for perovskite-based memory devices. Reactions of Pt and Ir films with substrates of silicon and tungsten suicide (WSi2.8/Si) were examined after anneals in atmospheric pressure ambients of oxygen or nitrogen al temperatures of 640 °C for various initial noble metal film thicknesses. Metal/silicon reactions and phase formation were studied by Rutherford Backscattering Spectroscopy, X-ray diffraction. and electrical resistance measurements. While annealing in nitrogen resulted in complete noble metal silicidation in the all samples, some Pt and most to all of the Ir remained after equivalent anneals in oxygen. Oxygen exhibited a greater inhibitory effect on silicidation in thin Ir samples, where no suicide formation was observed. The consistent presence of unreacted noble metal M after oxygen annealing is attributed to the formation of an oxygen-containing M-O-Si barrier which interferes with the silicidation reaction. Qualitative through-film resistance measurements indicate that these in-situ formed M-O-Si barrier layers can be at least moderately conductive, a prerequisite for their possible use as a replacement for deposited barrier materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 143
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Grill, A., Kane, W., Viggiano, J., Brady, M., and Laibowitz, R., J. Mater. Res. 7 3260 (1992).Google Scholar
2. Summerfeit, S.R., U.S. Patent No. 5,504,041 (2 April 1996); 5,585,300 (17 December 1996).Google Scholar
3. Hara, , Tanaka, M., Sakiyama, K., Onishi, S., Ishihara, K., and Kudo, J., Jpn. J. Appl. Phys. 2, Lett. 36 893 (1997).Google Scholar
4. Saenger, K.L., Grill, A., and Kotecki, D.E., J. Appl. Phys., in press for January 15, 1998.Google Scholar
5. Wee, A.T.S., Huan, A.C.H., Osipowicz, T., Lee, K.K., Thian, W.H., Tan, K.L., and Hogan, R., Thin Solid Films 23 130 (1996).Google Scholar
6. Harder, C., Hammer, L., and Muller, K., Phys. Stat. Sol. A 146 385 (1994).Google Scholar
7. Fernandez, M., Rodriguez, T., Almendra, A., Jimenez-Leube, J., and Wolters, H., Mat. Res. Soc. Symp. Proc. 299 325 (1994).Google Scholar
8. Saenger, K.L., Grill, A., Cabrai, C. Jr, IBM Research Report RC 20593 (October 1996), J. Mater. Res., in press for February 1998.Google Scholar
9. Jeon, Y.-C., Seon, J.-M., Joo, J.-H., Oh, K.-Y., Roh, J.-S., Kim, J.-J., and Kim, D.-S., Appl. Phys. Lett. 71467 (1997).Google Scholar