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Room Temperature Operation of UV-LED Composed of TCO Hetero p-n Junction, p-SrCu2O2/n-ZnO

Published online by Cambridge University Press:  10 February 2011

Hiromichi Ohta ,
Ken-Ichi Kawamura ,
Masahiro Orita ,
Nobuhiko Sarukura ,
Masahiro Hirano  and
Hideo Hosono
Hiromichi Ohta
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki-shi, 213-0012, JAPAN, ohta@team.ksp.or.jp
Ken-Ichi Kawamura
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki-shi, 213-0012, JAPAN
Masahiro Orita
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki-shi, 213-0012, JAPAN
Nobuhiko Sarukura
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki-shi, 213-0012, JAPAN Institute for Molecular Science, Okazaki National Research Institute, Myodaiji, Okazaki 444-8585, JAPAN
Masahiro Hirano
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki-shi, 213-0012, JAPAN
Hideo Hosono
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki-shi, 213-0012, JAPAN Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, JAPAN
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Abstract

Room temperature operation of UV LED is realized for the first time using a hetero p-n junction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO. Ni/SrCu2O2/ZnO/ITO multi-layered film was epitaxially grown on an extremely flat YSZ (111) surface by a PLD. The grown films were processed by a conventional photolithography, followed by reactive ion etching to fabricate p-n junction diode. The resultant device exhibited rectifying I-V characteristics inherent to p-n junction whose turn-on voltage was about 1.5V. A relatively sharp electro-luminescence band centered at 382nm was generated when applying the forward bias voltage larger than the turn-on voltage of 3V. The red shift in the EL peak was noticed from that of photo-luminescence (377nm), which was most likely due to the difference in the excited state density between the emission processes. The EL band is attributed to transition in ZnO, probably to that associated with electron-hole plasma. The photo-voltage was also generated when the p-n junction was irradiated with UV light of which energy coincided with both exciton and band-to-band transitions in ZnO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 283
Copyright
Copyright © Materials Research Society 2000

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