Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-05-09T14:31:16.012Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology Studies of Oxide Films Deposited by Rf Plasma Technique

Published online by Cambridge University Press:  10 February 2011

D. J. Hunt ,
R. W. Moss ,
J. E. Olson ,
D. H. Lee  and
X. W. Wang
D. J. Hunt
Affiliation:
Alfred University, Alfred, New York 14802
R. W. Moss
Affiliation:
Alfred University, Alfred, New York 14802
J. E. Olson
Affiliation:
Alfred University, Alfred, New York 14802
D. H. Lee
Affiliation:
Alfred University, Alfred, New York 14802
X. W. Wang
Affiliation:
Alfred University, Alfred, New York 14802
Get access

Abstract

Recently, an energetic film growth technique was developed. In this process, an RF (radio frequency) plasma was ignited in an ambient atmospheric environment. An aqueous solution was excited into mist, which was then fed into the plasma reactor. After vaporization, films were formed on substrates outside the plasma. As a by-product, small amount of powders were collected in the plasma reactor. Films studied were indium-tin oxide (ITO), aluminum oxide (Al2O3), and lanthanum strontium manganite oxides (LaSrMnO). Films and powders were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX, EDS), and Ultraviolet-Visible (UV-Vis) transmission measurements. Morphology of a film surface was dependent on deposition conditions, such as chemical composition of the precursor materials, precursor feeding rate, and/or substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 529
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wang, X. W., Zhong, H. H., and Snyder, R. L., Appl. Phys. Lett., Vol.57, 1581 (1990).Google Scholar
2. Shen, C. Q., Vuong, K. D., Williams, J. A., Leone, A., Fagan, J., Snyder, R. L., Wang, X. W., DeMarco, M., Stuckey, J., Petrov, D., and Naughton, M. J., Applied Superconductivity, Vol.3, 67 (1995).Google Scholar
3. DeMarco, M., Wang, X. W., Snyder, R. L., Simmins, J., Bayya, S., White, M., and Naughton, M., J. Appl. Phys., Vol.73, 6287 (1993).Google Scholar
4. Lee, D. H., Vuong, K. D., Williams, J. A., Fagan, J., Condrate, R. A., and Wang, X. W., J. Mater. Res., Vol.11,895 (1996).Google Scholar