Hostname: page-component-848d4c4894-4hhp2 Total loading time: 0 Render date: 2024-05-16T22:05:35.806Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Write Metallizations for Ag and Al

Published online by Cambridge University Press:  10 February 2011

C. J. Curtis ,
A. Miedaner ,
T. Rivkin ,
J. Alleman ,
D. L. Schulz  and
D. S. Ginley
C. J. Curtis
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
A. Miedaner
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
T. Rivkin
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
J. Alleman
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
D. L. Schulz
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
D. S. Ginley
Affiliation:
National Renewable Energy Laboratory, Golden, CO USA 80401
Get access

Abstract

We have employed inks containing nanometer-sized particles of Ag and Al (nano-Ag and nano-Al, respectively) as precursor inks for the formation of contacts to n- and p-type Si, respectively. The particles as formed by the electroexplosion process were dispersed in toluene, applied to Si and annealed above the respective eutectic temperatures. In the case of nano-Ag, this directly yields an ohmic contact. However, the nano-Al was found to be coated with an oxide layer that impairs the formation of an ohmic contact. A chelating chemical etch involving treatment with hexafluoroacetylacetone was developed to remove this oxide coat. This treated nano-Al produced a good ohmic contact. Smooth, pure Ag films have also been deposited by spray printing organometallic inks prepared from Ag(hfa)(SEt2) and Ag(hfa)(COD). These films are deposited in one step onto heated glass and Si substrates at one atmosphere pressure. The films show resistivities of ∼2 µΩ·cm. These inks appear to be amenable to ink-jet printing of Ag lines and as a low temperature glue for the Ag nanoparticles for thicker metallizations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 624: Symposium V – Materials Development for Direct Write Technologies , 2000 , 59
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nade, K., Kozuka, K., and Isogai, T., Inks for printed circuits. Jpn. Kokai Tokkyo Koho, 1979: p. 3 p.Google Scholar
2 Schulz, D.L. et al. , Particulate contacts to Si and CdTe: Al, Ag, Hg-Cu-Te, and Sb-Te. AIP Conf. Proc., 1999. 462(CPV Photovoltaics Program Review): p. 206–211.Google Scholar
3 Stark, J.V. et al. , Nanoscale Metal Oxide Particles/Clusters as Chemical Reagents. Unique Surface Chemistry on Magnesium Oxide As Shown by Enhanced Adsorption of Acid Gases (Sulfur Dioxide and Carbon Dioxide) and Pressure Dependence. Chem. Mater., 1996. 8(8): p. 1904–1912.Google Scholar
4 Von Roedern, B. and Bauer, G.H., Material requirements for buffer layers used to obtain solar cells with high open circuit voltages. Mater. Res. Soc. Symp. Proc., 1999. 557(Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices-1999): p. 761–766.Google Scholar
5 Rohatgi, A. et al. , Rapid processing of low-cost, high-efficiency silicon solar cells. Bull. Mater. Sci., 1999. 22(3): p. 383–390.Google Scholar
6 Haoto, D. and Iwamoto, Y., Thinfilm solar cells and their manufacture. Jpn. Kokai Tokkyo Koho, 1999: p. 8 p.Google Scholar
7 Miyoshi, K., Solar cells. Jpn. Kokai Tokkyo Koho, 1999: p. 4 p.Google Scholar
8 Petzow, G., Metallographic Etching. 1978, Metals Park, Ohio: American Society of Metals. 39–43.Google Scholar
9 Farkas, J., Hampden-Smith, M.J., and Kodas, T.T., FTIR Studies of the Adsorption/Desorption Behavior of Copper Chemical Vapor Deposition Precursors on Silica. 2. (1,1,1,5,5, 5-Hexafluoroacetylacetonato)(2-butyne)copper(I). J. Phys. Chem., 1994. 98(27): p. 6763–70.Google Scholar
10 Corbitt, T.S. et al. , Aerosol-assisted chemical vapor deposition of copper: a liquid delivery approach to metal thin films. Report, 1994(TR-12; Order No. AD-A279 702): p. 14p.Google Scholar
11 Jain, A., Kodas, T.T., and Hampden-Smith, M.J., Thermal dry-etching of copper using hydrogen peroxide and hexafluoroacetylacetone. Thin Solid Films, 1995. 269(1-2): p. 51–6.Google Scholar
12 Jain, A. et al. , Chemical vapor deposition of copper from (hfac)CuL (L = VTMS and 2-Butyne) in the presence of water, methanol, and dimethylether. Chem. Mater., 1996. 8(5): p. 1119–27.Google Scholar
13 Doyle, G., Eriksen, K.A., and VanEngen, D., Alkene and carbon monoxide derivatives of copper(I) and silver(I), beta.-diketonates. Organometallics, 1985. 4(5): p. 830–5.Google Scholar