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Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy

Published online by Cambridge University Press:  10 February 2011

Hernan Rueda ,
James Slinkman ,
Dureseti Chidambarrao ,
Leon Moszkowicz ,
Phil Kaszuba  and
Mark Law
Hernan Rueda
Affiliation:
Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
James Slinkman
Affiliation:
IBM Microelectronics, Essex Junction, VT 05452
Dureseti Chidambarrao
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
Leon Moszkowicz
Affiliation:
IBM Microelectronics, Essex Junction, VT 05452
Phil Kaszuba
Affiliation:
IBM Microelectronics, Essex Junction, VT 05452
Mark Law
Affiliation:
Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
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Abstract

method for characterizing the mechanical stress induced in silicon technology is described. Analysis by scanning Kelvin probe force microscopy (SKPM) coupled with finite-element (FE) mechanical strain simulations is performed. The SKPM technique detects variations in the semiconductor work function due to strain influences on the band gap. This technique is then used to analyze the strain induced by shallow trench isolation processes for electrical isolation. The SKPM measurements agree with the FE simulations qualitatively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 245
Copyright
Copyright © Materials Research Society 1999

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References

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