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Photoluminescence Characterization of Defects in Thermal Oxide

Published online by Cambridge University Press:  10 February 2011

Hiroyuki Nishikawa  and
James H. Stathis
Hiroyuki Nishikawa
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan Univ., 1-1 Minami-Osawa, Hachioji, Tokyo 192-0397, JAPAN, nishi@eei.metro-u.ac.jp
James H. Stathis
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. 0. Box 218, Yorktown Heights, NY 10598, USA
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Abstract

Defects in thermal oxides were investigated by a photoluminescence technique. Thermal oxides with a thickness of 100 nm grown either by dry or wet oxidation were studied. A broad PL band at 2-4 eV was observed for both dry and wet oxides. Effects of annealing under vacuum or in atmospheres of Ar or N2 on the PL were also examined. The PL intensity was enhanced for the case of wet oxide by vacuum annealing at 700 °C. High-temperature anneal above 750 °C without O2 further generated PL centers for both dry and wet oxides. The formation mechanism of the PL centers will be discussed in terms of the decomposition of oxide at Si/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 289
Copyright
Copyright © Materials Research Society 2000

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References

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