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The Effect of the Surface Layer on the Dielectric Constant of (Pb, La)TiO3 Thin Films

Published online by Cambridge University Press:  11 February 2011

G.L. Yu ,
D.Q. Xiao ,
L.L. Meng ,
P. Yu  and
J.G. Zhu
G.L. Yu
Affiliation:
Department of Materials and Science Sichuan University Chengdu, 610064, China
D.Q. Xiao
Affiliation:
Department of Materials and Science Sichuan University Chengdu, 610064, China
L.L. Meng
Affiliation:
Department of Materials and Science Sichuan University Chengdu, 610064, China
P. Yu
Affiliation:
Department of Materials and Science Sichuan University Chengdu, 610064, China
J.G. Zhu
Affiliation:
Department of Materials and Science Sichuan University Chengdu, 610064, China
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Abstract:

(Pb, La)TiO3 (PLT) ferroelectric thin films are one of the promising candidates for applications in dynamic random memory and pyroelectric detectors, etc. However, the chemical composition in the surface layer of thin films is usually different from that in the “bulk” region of the thin films. For instance, it has been reported that there is Pb, Ti, or La enrichment in the surface layer of the (Pb, La)TiO3 thin films. According to a numerical modeling using effective-medium theory, which was developed in our group, we discussed the effect of the surface layer on the dielectric constant of (Pb, La)TiO3 thin films. The effect of Pb, Ti, or La enrichment in the surface layer on the dielectric constant of PLT thin films was discussed. And a case of the “upgraded” and the “down-graded” thin films was expatiated and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 751: Symposium Z – Structure-Property Relationships of Oxide Surfaces and Interfaces II , 2002 , Z3.7
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Qian, Zhenghong, Xiao, Dingquan, Zhu, Jianguo, Li, Zisheng and Zuo, Chongming, J. Appl. Phys., 74(1), 224(1994)Google Scholar
2. Chen, San-Yuan and Chen, I-Wei, J. Am. Ceram. Soc., 77, 2332(1994)Google Scholar
3. Chen, H.Y., Lin, J., Tan, K.L. and Feng, Z.C., Thin Solid Films, 59, 289(1996)Google Scholar
4. Xiao, D.Q., Meng, L.L., Ferroelectrics Letters, (in press)Google Scholar
5. Xiao, Dingquan, Meng, Linli and Yu, Guanglong, Materials & Design, (in press)Google Scholar
6. Rao, Y., Qu, J., Wong, C.P., Marinis, T., Proceeding of the 6th International Symposium on Advanced Packaging Materials, (2000), p44 Google Scholar
7. Maiwa, Hiroshi and Ichinose, Noboru, Jpn. J. Appl. Phys., 35, 4976(1996)Google Scholar
8. Lijima, Keriji, Takayama, Ryoichi, Tomita, Yoshivo, J. Appl. Phys., 60(8), 2914(1986)Google Scholar
9. Wang, Chih-Ming, Chen, Ying-Chung, Lee, Maw-Shung, Wu, Ju-Wen and Chiou, Chien-chih, Jpn. J. Appl. Phys., 37, 951(1998)Google Scholar
10. Xiao, Dingquan, Xiao, Zhili, Zhu, Jumu, Wang, Derui, Guo, Huachong, Xie, Bizheng, and Yuan, Hong, Appl. Phys Lett., 58(1), 36(1991)Google Scholar
11. Bao, Dinghua and Mizutani, Nobuyasu, Appl. Phys. Lett., 77(8), 1203(2000)Google Scholar
12. Kingon, Angus I., Maria, Jon-Paul & Streiffer, S.K., Nature, 406, 1032(2000)Google Scholar