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Hydrothermally Grown Single-Crystalline Zinc Oxide; Characterization and Modification

Published online by Cambridge University Press:  01 February 2011

Bengt Gunnar Svensson
Affiliation:
b.g.svensson@fys.uio.no, University of Oslo, Physics/SMN, Sem Sælemsvei 24, Blindern, Oslo, Oslo, NO-0316, Norway, +4722852859, +4722852860
Thomas Moe Børseth
Affiliation:
t.j.m.borseth@fys.uio.no, University of Oslo, Physics/SMN, Oslo, NO-0316, Norway
Klaus Magnus Johansen
Affiliation:
k.m.h.johansen@smn.uio.no, University of Oslo, Physics/SMN, Oslo, NO-0316, Norway
Tariq Maqsood
Affiliation:
tariq.maqsood@fys.uio.no, University of Oslo, Physics/SMN, Oslo, NO-0316, Norway
Ramon Schifano
Affiliation:
Ramon Schifano ramon.schifano@smn.uio.no, University of Oslo, Physics/SMN, Oslo, NO-0316, Norway
Ulrike Grossner
Affiliation:
ulrike.grossner@fys.uio.no, University of Oslo, Physics/SMN, Oslo, NO-0316, Norway
Jens S. Christensen
Affiliation:
j.s.christensen@fys.uio.no, University of Oslo, Physics/SMN, Oslo, NO-0316, Norway
Lasse Vines
Affiliation:
lasse.vines@fys.uio.no, University of Oslo, Physics/SMN, Oslo, NO-0316, Norway
Peter Klason
Affiliation:
peter.klason@physics.gu.se, University of Gothenburg, Physics, Göteborg, SE-41296, Sweden
Qing X. Zhao
Affiliation:
Qingxiang.Zhao@itn.liu.se, University of Gothenburg, Physics, Göteborg, SE-41296, Sweden
Magnus Willander
Affiliation:
mwi@fy.chalmers.se, University of Gothenburg, Physics, Göteborg, SE-41296, Sweden
Filip Tuomisto
Affiliation:
filip.tuomisto@tkk.fi, Helsinki University of Technology, Physics, Helsinki, F-02015 TKK, Finland
Wolfgang Skorupa
Affiliation:
w.skorupa@fzd.de, Research Center Rossendorf, Dresden, D-01314, Germany
Edouard V. Monakhov
Affiliation:
edouard.monakhov@fys.uio.no, University of Oslo, Physics/SMN, Oslo, NO-0316, Norway
Andrej Yu. Kuznetsov
Affiliation:
andrej.kuznetsov@fys.uio.no, University of Oslo, Physics/SMN, Oslo, NO-0316, Norway
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Abstract

An overview of our recent results on characterization and modification of high-resistivity n-type bulk zinc oxide samples, grown by hydrothermal techniques, is given. Three specific topics are addressed; (i) the role of lithium (Li) as an electrically compensating impurity, (ii) extrinsic n-type doping by hydrogen implantation, and (iii) influence of annealing conditions on deep band emission. In (i), furnace annealing of as-grown samples at temperatures above ∼800 °C is shown to cause out-diffusion of residual Li impurities and concurrently, the resistivity decreases. After annealing at 1400 °C, a resistivity close to 10−1 Ωcm is obtained and the Li content is reduced from above 1017 cm−3 to the mid 1015 cm−3 range, providing evidence for the crucial role of Li as an electrically compensating impurity. For ion-implanted samples, vacancy clusters evolve during post-implant flash lamp annealing (20 ms duration) and these clusters appear to trap and deactivate Li with a resulting improvement of the n-type conductivity. However, these clusters have a limited stability and start to dissociate already after 1h at 900 °C, accompanied by a decrease in the conductivity. For topic (ii), n-type doping by hydrogen implantation is shown to enhance the conductivity by about 5 orders of magnitude already in the as-implanted state. Despite substantial loss of hydrogen, the conductivity remains stable, or even increases, after annealing up to ≥600 °C, and necessary conditions for doping by hydrogen are discussed. In (iii), the origin of the commonly observed deep band emission from monocrystalline zinc oxide is investigated using a concept of annealing as-grown samples in different atmospheres. A strong influence by the atmosphere and temperature is observed and the results can be interpreted in terms of dominant effects on the emission by vacancy-related defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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