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Hydrogen Migration in Single Crystalline ZnO

Published online by Cambridge University Press:  01 February 2011

Klaus Magnus Håland Johansen ,
Jens Sherman Christensen ,
Edouard V. Monakhov ,
Andrej Yu. Kuznetsov  and
Bengt Gunnar Svensson
Klaus Magnus Håland Johansen
Affiliation:
klausmj@fys.uio.no, University of Oslo, Centre for Materials Science and Nanotechnology, Pb 1126 Blindern, Oslo, 0318, Norway, +4799578163
Jens Sherman Christensen
Affiliation:
jenssherman@gmail.com, University of Oslo, Department of Physics, PB 1048 Blindern, Oslo, 0316, Norway
Edouard V. Monakhov
Affiliation:
edouard.monakhov@fys.uio.no, University of Oslo, Department of Physics, PB 1048 Blindern, Oslo, 0316, Norway
Andrej Yu. Kuznetsov
Affiliation:
andrej.kuznetsov@fys.uio.no, University of Oslo, Department of Physics, PB 1048 Blindern, Oslo, 0316, Norway
Bengt Gunnar Svensson
Affiliation:
b.g.svensson@fys.uio.no, University of Oslo, Department of Physics, PB 1048 Blindern, Oslo, 0316, Norway
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Abstract

Hydrogen has been proposed as one of the contributors to the native n-type doping in as-grown Zinc Oxide and can also be used as an active (intentional) n-type dopant. In this work we have employed Secondary Ion Mass Spectrometry (SIMS) to study deuterium diffusion profiles in single crystalline ZnO. The samples used are hydrothermally grown, high-resistive (10 kΩ cm) monocrystalline ZnO implanted with deuterium to a dose of 1×1015 cm−2 yielding a peak concentration of approximately 5 × 1018 cm−3 at a depth of 2.2 µm. Diffusion profiles have been studied after 30 minutes isochronal heat treatments from 100ºC up to 400ºC in steps of 50ºC. The observed redistribution can be explained by employing a diffusion model which includes trapping of 2H by Li-impurities and an activation energy of 0.85 eV is extracted for the diffusion of 2H.

Keywords

secondary ion mass spectroscopy (SIMS)II-VIH
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L03-10
Copyright
Copyright © Materials Research Society 2008

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