Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-23T12:54:28.514Z Has data issue: false hasContentIssue false
  • English
  • Français

Current Transport in Cu(In,Ga)S2 Based Solar Cells with High Open Circuit Voltage - Bulk vs. Interface

Published online by Cambridge University Press:  31 January 2011

Saoussen Merdes ,
Benjamin Johnson ,
Rodrigo Sáez-Araoz ,
Ahmed Ennaoui ,
Joachim Klaer ,
Iver Lauermann ,
R. Mainz ,
Alexander Meeder  and
Reiner Klenk
Saoussen Merdes
Affiliation:
saoussen.merdes@helmholtz-berlin.de, Helmholtz-Zentum-Berlin, Heterogeneous Material Systems, Glienicker Str. 100, berlin, 14109, Germany, +49-30-8062-2610, +49-30-8062-3199
Benjamin Johnson
Affiliation:
benjamin.johnson@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Rodrigo Sáez-Araoz
Affiliation:
rodrigo.saez@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Ahmed Ennaoui
Affiliation:
ennaoui@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Joachim Klaer
Affiliation:
klaer@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Iver Lauermann
Affiliation:
iver.lauermann@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
R. Mainz
Affiliation:
roland.mainz@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Alexander Meeder
Affiliation:
meeder@sulfurcell.de, Sulfurcell Solartechnik GmbH, Berlin, Germany
Reiner Klenk
Affiliation:
klenk@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Get access

Abstract

Cu(In,Ga)S2 thin films prepared by rapid thermal sulfurization of metallic precursors yielded solar cells with efficiencies reaching 12.9% [1]. A good short circuit current density was observed together with open circuit voltages up to 850 mV. However, the fill factor was close to, but typically did not exceed 70%. In this contribution we report on the role of junction formation by chemical bath deposition on these parameters. Concentrations in the bath and deposition times were varied. A comparison is made between CdS and Zn(S,O) buffer layers. The influence of the incorporated gallium on surface properties was investigated by ultraviolet photoelectron spectroscopy (UPS) for the valence band edge and near edge X-ray absorption fine structure (NEXAFS) for the conduction band edge. Even in our best cell (13.1%) the activation energy of the saturation current is found to be still smaller than the band gap. High diode ideality factors and voltage dependent current collection prevent higher fill factors.

Keywords

thin filmphotovoltaicelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M05-15
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Siemer, K. Klaer, J. Luck, I. Bruns, J. Klenk, R. Bräunig, D., Sol. Energy Mater. Sol. Cells 67, 159(2001).Google Scholar
2. Merdes, S. Kaigawa, R. Klaer, J. Klenk, R. Mainz, R. Meeder, A. Papathanasiou, N. Abou-Ras, D. and Schmidt, S. Proc. 23rd European Photovoltaic Solar Energy Conference, Valencia, 2588 (2008).Google Scholar
3. Kassis, A. and Saad, M. Sol. Energy Mater. Sol. Cells 80, 491(2003).Google Scholar
4. Caballero, R. Kaufmann, C.A. Cwil, M. Kelch, C. Schweigert, D. Unold, T. Rusu, M. Schock, H.W. and Siebentritt, S. J. Phys.:Condens. Matter 19, 356222(2007).Google Scholar
5. Ennaoui, A. Bär, M., Klaer, J. Kropp, T. Sáez-Araoz, R. and Lux-Steiner, M. Ch., Prog. Photovolt: Res. Appl. 14, 499(2006).Google Scholar
6. Braunger, D. Dürr, Th., Hariskos, D. Köble, Ch., Walter, Th. Wieser, N. and Schock, H.W. Proc. 25th IEEE Photovoltaic Specialists Conference, 1001 (1996).Google Scholar
7. Hengel, I. Neisser, A. Klenk, R. and Lux-Steiner, M.Ch., Thin Solid Films 361-362, 458(2000).Google Scholar