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In Situ Reflection Electron Microscopy of Ge Island Nucleation on Mesa Structures

Published online by Cambridge University Press:  22 January 2004

F.M. Ross ,
M. Kammler ,
M.E. Walsh  and
M.C. Reuter
F.M. Ross
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
M. Kammler
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA
M.E. Walsh
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
M.C. Reuter
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
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Abstract

We have used in situ electron microscopy to observe the nucleation of Ge islands on lithographically patterned Si(001) mesas. Images were obtained at video rate during chemical vapor deposition of Ge, using a reflection electron microscopy geometry that allows nucleation to be observed over large areas. By comparing the kinetics of nucleation and coarsening on substrates modified by different annealing conditions, we find that the final island arrangement depends on the nature of the mesa sidewalls, and we suggest that this may be due to changes in diffusion of Ge across the nonplanar surface.

Keywords

Ge epitaxyquantum dotschemical vapor depositionin situ microscopy
Type
Research Article
Information
Microscopy and Microanalysis , Volume 10 , Issue 1 , February 2004 , pp. 105 - 111
Copyright
© 2004 Microscopy Society of America

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References

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