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The reaction between a TiNi shape memory thin film and silicon

Published online by Cambridge University Press:  31 January 2011

Susanne Stemmer ,
Gerd Duscher ,
Christina Scheu ,
Arthur H. Heuer  and
Manfred Rühle
Susanne Stemmer
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
Gerd Duscher
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
Christina Scheu
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
Arthur H. Heuer
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
Manfred Rühle
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
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Abstract

The reaction between shape-memory TiNi thin films and silicon has been characterized by conventional, analytical, and high-resolution transmission electron microscopy. A reaction layer is formed during the 525 °C post-deposition crystallization anneal of the sputter-deposited TiNi, and consists of several phases: Ti2Ni, a nickel silicide, and a ternary titanium nickel silicide. The mechanism for the interlayer formation is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 7 , July 1997 , pp. 1734 - 1740
Copyright
Copyright © Materials Research Society 1997

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References

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