Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T10:24:45.035Z Has data issue: false hasContentIssue false
  • English
  • Français

Impact of Single-Event Upsets in Deep-Submicron Silicon Technology

Published online by Cambridge University Press:  31 January 2011

Robert Baumann
Get access

Abstract

The once-ephemeral soft error phenomenon has recently caused considerable concern for manufacturers of advanced silicon technology. Soft errors, if unchecked, now have the potential for inducing a higher failure rate than all of the other reliability-failure mechanisms combined. This article briefly reviews the three dominant radiation mechanisms responsible for soft errors in terrestrial applications and how soft errors are generated by the collection of radiation-induced charge. Scaling trends in the soft error sensitivity of various memory and logic components are presented, along with a consideration of which applications are most likely to require intervention. Some of the mitigation strategies that can be employed to reduce the soft error rate in these devices are also discussed.

Keywords

radiationsemiconductorssingle-event upsetssoft errors
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 2: Single-Event Upsets in Microelectronics , February 2003 , pp. 117 - 120
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.May, T.C. and Woods, M.H., IEEE Trans. Electron Devices 26 (1) (1979) p. 8.Google Scholar
2.Ziegler, J.F. and Lanford, W.A., J. Appl. Phys. 52 (1981) p. 4318.CrossRefGoogle Scholar
3.Gossett, C.A., Hughlock, B.W., Katoozi, M., LaRue, G.S., and Wender, S.A., IEEE Trans. Nucl. Sci. 40 (6) (1993) p. 1856.CrossRefGoogle Scholar
4.McKee, W.R., McAdams, H.P., Smith, E.B., McPherson, J.W., Janzen, J.W., Ondrusek, J.C., Hyslop, A.E., Russell, D.E., Coy, R.A., Bergman, D.W., Nguyen, N.Q., Aton, T.J., Block, L.W., and Huynh, V.C., in Proc. 34th IEEE Int. Reliability Physics Symp. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1996) p. 1.Google Scholar
5.Normand, E., IEEE Trans. Nucl. Sci. 43 (6) (1996) p. 2750.Google Scholar
6.Baumann, R.C., Hossain, T.Z., Murata, S., and Kitagawa, H., in Proc. 33rd IEEE Int. Reliability Physics Symp. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1995) p. 302.Google Scholar
7.Baumann, R.C. and Smith, E.B., in Proc. 38th IEEE Int. Reliability Physics Symp. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 157.Google Scholar
8.Baumann, R.C. and Smith, E.B., Microelectron. Relia. 41 (2) (2001) p. 218.CrossRefGoogle Scholar
9.Hsieh, C.M., Murley, P.C. and O'Brien, R.R, in Proc. 19th IEEE Int. Reliability Physics Symp. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1981) p. 42.Google Scholar
10.Massengill, L., IEEE Trans. Nucl. Sci. 43 (2) (1996) p. 576.CrossRefGoogle Scholar
11.Palau, J.M., Hubert, G., Coulie, K., Sagnes, B., Calvet, M.C., and Fourtine, S., IEEE Trans. Nucl. Sci. 48 (2) (2001) p. 225.CrossRefGoogle Scholar
12.Roche, P., Palau, J.M., Bruguier, G., Tavernier, C., Ecoffet, R., and Gasiot, J., IEEE Trans. Nucl. Sci. 46 (6) (1999) p. 1354.CrossRefGoogle Scholar
13.Dodd, P.E., IEEE Trans. Nucl. Sci. 43 (2) (1996) p. 561.CrossRefGoogle Scholar
14.Massengill, L.W., Baranski, A.E., Van Nort, D.O., Meng, J., and Bhuva, B.L., IEEE Trans. Nucl. Sci. 47 (6) (2000) p. 2607.CrossRefGoogle Scholar
15. “Getting the Lead Out,” Dr. Dobb's Journal (April 2000) Web article, http://www.ddj.com/documents/s=886/ddj0004t/0004t.htm (accessed November 2002).Google Scholar
16.Musseau, O., IEEE Trans. Nucl. Sci. 43 (2) (1996) p. 604.Google Scholar
17.Baze, M.P, Buchner, S.P, and McMorrow, D., IEEE Trans. Nucl. Sci. 47 (6) (2000) p. 2603.CrossRefGoogle Scholar